[9p-A21-1~15] 13.7 Compound and power devices, process technology and characterization

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[9p-A21-3] SiC MOSFET with SiC / SiO₂ interfaces nitrided by the hot-wire method

〇Tomoki Oku¹, Kohei Nishiguchi¹, Masahiro Totsuka¹, Yasuyuki Nakagawa¹, Tomokatsu Watanabe¹ (1.Mitsubishi Electric)

Keywords:

hot-wire method,surface nitridation,SiC MOSFET

A SiC MOSFET was fabricated by applying a hot-wire surface nitridation to the SiC/SiO2 interface, and its characteristics were evaluated.