Presentation Information
[9p-A21-5]First-principles analysis of SiO2/SiC interface defects: A comparison with SiC bulk defects
〇(D)Sosuke Iwamoto1, Masahiro Hara1, Heiji Watanabe1, Takuma Kobayashi1 (1.UOsaka)
Keywords:
SiC,ab initio calculation,color center
