[9p-A21-1~15] 13.7 Compound and power devices, process technology and characterization

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-A21-6] Calculation of electronic states in 4H-Si inversion layer based on the tight-binding model fo conduction band of 4H-SiC

〇Sachika Nagamizo¹, Nobuya Mori¹ (1.Osaka Univ.)

Keywords:

Silicon Carbide,inversion layer,tight binding approximation

To elucidate the factors responsible for the degradation of channel mobility in 4H-SiC inversion layers, a model that combines an atomistic description of the near-interface region of 4H-SiC with high computational efficiency is required. In this study, we described 4H-SiC interfaces using a tight-binding model previously developed by the presenter, which accurately reproduces the conduction-band structure of 4H-SiC with high computational efficiency. The calculated electronic states in the inversion layer exhibited characteristic features consistent with those reported in first-principles calculations.