[9p-A21-1~15] 13.7 Compound and power devices, process technology and characterization

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[9p-A21-7] EDMR spectroscopy on conduction-band-side interface states of 4H-SiC(0001) MOSFETs induced by Fowler-Nordheim stress

〇Bunta Shimabukuro¹, Keigo Adachi¹, Mitsuru Sometani², Hirohisa Hirai², Heiji Watanabe³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.Univ. of Osaka)

Keywords:

semiconductor,wide bandgap,MOS interface

The conduction-band-side interface states of 4H-SiC(0001) MOSFETs induced by Fowler-Nordheim stress were investigated by electrically-detected-magnetic-resonance spectroscopy. Among the three types of 4H-SiC MOSFETs (dry oxidation, dry + wet oxidation and dry + wet oxidation + FN stress), the FN-stress induced MOSFET exhibited the largest EDMR signal, which suggests that FN stress increased the density of interface states.