[9p-A22-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-A22-12] Simulation of Single Event Transient in Nanosheet-Based FETs

〇(M1)Vanness Filbert Cierra¹, Yoshinari Kamakura¹ (1.Osaka Inst. Tech.)

Keywords:

nanosheet FET,soft error,simulation

Software errors are recognized as one of the major concerns affecting the reliability of integrated circuits, and simulation analyses are widely conducted. Among the tools used, TCAD device simulators are highly accurate but require enormous computation time, so simplified analysis using SPICE is also a useful method. In this study, we attempted to reproduce the TCAD simulation of the transient current flowing through the nanosheet FET after radiation incidence using SPICE, and investigated the response of SRAM under various incident conditions using this simplified analysis method.