[9p-A22-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[9p-A22-2] Development of a Thermometer Based on Weak Localization and Measurement of the Thermal Conductivity of SiO₂ at Cryogenic Temperatures

〇(M2)Kazuki Watanabe¹, Michimasa Morita¹, Keito Yoshinaga¹, Ryo Toyoshima¹, Ken Uchida¹ (1.Univ. of Tokyo)

Keywords:

Cryo CMOS,Thermal conductivity,Weak localization effect

Cryo-CMOS is indispensable for the realization of quantum computers, and its thermal design requires experimental evaluation of the thermal conductivity of CMOS materials at cryogenic temperatures. In this study, we developed a Cu thin-film thermometer whose resistivity exhibits temperature dependence even at cryogenic temperatures owing to the weak localization effect, and measured the thermal conductivity of SiO₂ at cryogenic temperatures by 3ω method. The measured values agreed with literature values obtained by the steady-state method within experimental error, demonstrating the effectiveness of this CMOS-process-compatible technique for evaluating thermal properties at cryogenic temperatures.