[9p-A22-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-A22-7] V_ov-Induced Transition Between Long- and Short-Channel Operation in I_Dsat

〇Naoyuki Shigyo¹, Miura Oki¹ (1.Kumamoto University)

Keywords:

gate overdrive voltage,drain saturation current

The drain saturation current I_Dsat of a MOSFET is known to be proportional to V_ov² in long-channel devices and to V_ov in short-channel devices, where V_ov (= V_G - V_th) denotes the gate overdrive. In this article, the transition of I_Dsat from long-channel operation to short-channel operation is reported. It is also shown that the operating regime of I_Dsat depends not only on the channel length L but also onV_ov.