[9p-A22-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[9p-A22-8] Monte Carlo Simulation of Electron Transport in MOSFETs under Impurity-Induced Random Potentials

〇Kaoru Kato¹, Hajime Tanaka^1,2, Nobuya Mori¹ (1.UOsaka, 2.Kwansei Gakuin Univ.)

Keywords:

semiconductor,cryogenic

In MOSFETs, potential fluctuations arising from substrate impurities give rise to an exponential tail in the averaged density of states. In this study, electron transport in random potentials induced by discrete acceptors was simulated using the Monte Carlo method, and the effects of tail states on transport properties were examined.