Presentation Information
[9p-A33-14]Mechanistic Study of Water-Induced Operational Instability in MoS2 FETs
〇(M2)Taiga Sakai1, Ryo Nouchi1 (1.Osaka Metropolitan Univ.)
Keywords:
transition metal dichalcogenide,water-derived ions,environmental effect
Two-dimensional semiconductor field-effect transistors exhibit operational instabilities, including hysteresis, in the presence of water molecules. Humidity-dependent measurements of exfoliated MoS2 FETs showed that gate-induced hysteresis increased with increasing humidity. Under high-humidity conditions, the onset voltage shifted markedly in the negative direction depending on the drain voltage, suggesting modulation of the contact barrier and/or the channel. These results indicate that separate analysis of the effects of gate and drain voltages is essential for understanding water-induced operational instability.