[9p-A33-1~16] 17.3 Applications | The 87th JSAP Autumn Meeting 2026

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Session Details

Oral presentation17 Nanocarbon and Two-Dimensional Materials : 17.3 Applications

[9p-A33-1~16]17.3 Applications

Wed. Sep 9, 2026 2:00 PM - 6:15 PM JST
Wed. Sep 9, 2026 5:00 AM - 9:15 AM UTC

A33 (Faculty of Info. Sci. & Tech. Bldg.)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[9p-A33-1][The 60th Young Scientist Presentation Award Speech] Integrated multi-AI agent and robot system for fabrication and analysis of 2D semiconductors

〇Wataru Idehara¹, Kohei Aso², Yukiko Takamura-Yamada², Yoshifumi Oshima², Kenji Watanabe³, Takashi Taniguchi³, Shinichiro Matano¹, Kazunari Matsuda¹ (1.Kyoto Univ., 2.JAIST, 3.NIMS)

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[9p-A33-2]External electric field control of magnetic injection current in 2D antiferromagnetic material device

〇Shuichi Asada¹, Shinichiro Matano¹, Kenji Watanabe², Takashi Taniguchi², Mina Maruyama³, Yanlin Gao³, Susumu Okada³, Kazunari Matsuda¹ (1.IAE, Kyoto Univ., 2.NIMS, 3.Tsukuba. Univ.)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[9p-A33-3]Carrier-transport modulation in a WSe₂ photocurrent device using surface acoustic waves

〇Hidetoshi Kanzawa¹, Yuta Takahashi¹, Hajime Kumazaki¹, Shinichi Watanabe¹, Shun Fujii¹ (1.Keio Univ.)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)English Presentation

[9p-A33-4]Evaluation of Highly Stretchable Substrates for Flexible 2D Material Devices

〇YihRen Chang¹, Yoshiaki Hattori¹, Masatoshi Kitamura¹ (1.Kobe Univ.)

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[9p-A33-5]A New Nonvolatile Doping Approach for Contact Engineering in Monolayer TMDCs

〇koshi Oi¹, Keisuke Imaeda¹, Shuta Hori¹, Taiga Aridome¹, Junya Mori¹, Takahiko Endo², Yasumitsu Miyata², Akitoshi Nakano¹, Taishi Takenobu¹ (1.Nagoya Univ., 2.NIMS)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-A33-6]Electrolyte-Based Contact Engineering at Monolayer TMDC/Metal Interfaces

〇(M2)Keisuke Imaeda¹, Koshi Oi¹, Fumiya Minatogawa¹, Shuta Hori¹, Takahiko Endo², Yasumitsu Miyata², Akitoshi Nakano¹, Taishi Takenobu¹ (1.Nagoya Univ., 2.NIMS)

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[9p-A33-7]PVD-WS₂ Film on PVD-AlN/Si (111) Substrate

〇(B)Yota Shima¹, Soma Ito¹, Shunsuke Nozawa¹, Koki Fukuda¹, Taiga Fuse¹, Naoki Matsunaga¹, Takuya Hoshii¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi² (1.Science Tokyo., 2.Green-niX.)

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-A33-8]Carrier type control by ion implantation in MoS₂ thin films and TFT characteristics.

〇Masamichi Tsuchida¹, Toshimasa Ui², Yuya Yamane², Keisuke Yasuta², Satoru Sonezaki², Kousaku Shimizu (1.Nihon Univ., 2.Nissin Ion Equipment Co., Ltd.)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)English Presentation

[9p-A33-9]Mass and Elastic Effect-Driven Suspended and Non-Suspended MoS₂-Based Surface Acoustic Wave Skin Gas Sensors

〇Sankar Ganesh Ramaraj¹, Ryo Fujioka¹, Chen Li¹, Daisuke Kiriya¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹ (1.Univ. of Tokyo)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[9p-A33-10]Radical Molecular Interface Engineering for WSe₂ Memtransistors towards Neuromorphic Computing

〇(D)Huiqin Liu¹, Durgadevi Elamaran¹, Guanting Liu¹, Daisuke Kiriya¹ (1.Univ. of Tokyo)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)English Presentation

[9p-A33-11]Charge-Transfer Complex Modulated MoS₂ Surface for ppb-Level Acetone Sensing at Room Temperature

〇(D)CHEN LI¹, Guanting Liu¹, Ramaraj Sankar Ganesh¹, Mao Xu¹, Hitoshi Tabata¹, Daisuke Kiriya¹ (1.Univ. Tokyo)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)English Presentation

[9p-A33-12]WS₂–Amorphous Carbon Heterointerfaces for Humidity-Tolerant Sub-ppb NO₂ Sensing

〇(P)Sukhwinder Singh¹, Ken Uchida¹ (1.Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[9p-A33-13]Development of ReRAM based on TaO_x_/TaS₂ heterostructures

〇Rikuma Kanazawa¹, Mitsuru Inada¹, Keiji Ueno², Mahito Yamamoto¹ (1.Kansai Univ., 2.Saitama Univ.)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

The 87th JSAP Autumn Meeting 2026

Session Details

[9p-A33-1~16]17.3 Applications

[9p-A33-1][The 60th Young Scientist Presentation Award Speech] Integrated multi-AI agent and robot system for fabrication and analysis of 2D semiconductors

[9p-A33-2]External electric field control of magnetic injection current in 2D antiferromagnetic material device

[9p-A33-3]Carrier-transport modulation in a WSe₂ photocurrent device using surface acoustic waves

[9p-A33-4]Evaluation of Highly Stretchable Substrates for Flexible 2D Material Devices

[9p-A33-5]A New Nonvolatile Doping Approach for Contact Engineering in Monolayer TMDCs

[9p-A33-6]Electrolyte-Based Contact Engineering at Monolayer TMDC/Metal Interfaces

[9p-A33-7]PVD-WS₂ Film on PVD-AlN/Si (111) Substrate

[9p-A33-8]Carrier type control by ion implantation in MoS₂ thin films and TFT characteristics.

[9p-A33-9]Mass and Elastic Effect-Driven Suspended and Non-Suspended MoS₂-Based Surface Acoustic Wave Skin Gas Sensors

[9p-A33-10]Radical Molecular Interface Engineering for WSe₂ Memtransistors towards Neuromorphic Computing

[9p-A33-11]Charge-Transfer Complex Modulated MoS₂ Surface for ppb-Level Acetone Sensing at Room Temperature

[9p-A33-12]WS₂–Amorphous Carbon Heterointerfaces for Humidity-Tolerant Sub-ppb NO₂ Sensing

[9p-A33-13]Development of ReRAM based on TaO_x_/TaS₂ heterostructures

[9p-A33-14]Mechanistic Study of Water-Induced Operational Instability in MoS₂ FETs

[9p-A33-15]First-Principles Investigation of Irradiation-Induced Mo-Doped TiS₂ for Advanced NO₂ Gas Detection

[9p-A33-16]A DFT Study of Au-Functionalized MoSe₂ via Irradiation for Advanced NO₂ Gas Detection

Session Details

[9p-A33-1~16]17.3 Applications

[9p-A33-1][The 60th Young Scientist Presentation Award Speech] Integrated multi-AI agent and robot system for fabrication and analysis of 2D semiconductors

[9p-A33-2]External electric field control of magnetic injection current in 2D antiferromagnetic material device

[9p-A33-3]Carrier-transport modulation in a WSe2 photocurrent device using surface acoustic waves

[9p-A33-4]Evaluation of Highly Stretchable Substrates for Flexible 2D Material Devices

[9p-A33-5]A New Nonvolatile Doping Approach for Contact Engineering in Monolayer TMDCs

[9p-A33-6]Electrolyte-Based Contact Engineering at Monolayer TMDC/Metal Interfaces

[9p-A33-7]PVD-WS2 Film on PVD-AlN/Si (111) Substrate

[9p-A33-8]Carrier type control by ion implantation in MoS2 thin films and TFT characteristics.

[9p-A33-9]Mass and Elastic Effect-Driven Suspended and Non-Suspended MoS2-Based Surface Acoustic Wave Skin Gas Sensors

[9p-A33-10]Radical Molecular Interface Engineering for WSe2 Memtransistors towards Neuromorphic Computing

[9p-A33-11]Charge-Transfer Complex Modulated MoS2 Surface for ppb-Level Acetone Sensing at Room Temperature

[9p-A33-12]WS2–Amorphous Carbon Heterointerfaces for Humidity-Tolerant Sub-ppb NO2 Sensing

[9p-A33-13]Development of ReRAM based on TaOx/TaS2 heterostructures

[9p-A33-14]Mechanistic Study of Water-Induced Operational Instability in MoS2 FETs

[9p-A33-15]First-Principles Investigation of Irradiation-Induced Mo-Doped TiS2 for Advanced NO2 Gas Detection

[9p-A33-16]A DFT Study of Au-Functionalized MoSe2 via Irradiation for Advanced NO2 Gas Detection

[9p-A33-3]Carrier-transport modulation in a WSe₂ photocurrent device using surface acoustic waves

[9p-A33-7]PVD-WS₂ Film on PVD-AlN/Si (111) Substrate

[9p-A33-8]Carrier type control by ion implantation in MoS₂ thin films and TFT characteristics.

[9p-A33-9]Mass and Elastic Effect-Driven Suspended and Non-Suspended MoS₂-Based Surface Acoustic Wave Skin Gas Sensors

[9p-A33-10]Radical Molecular Interface Engineering for WSe₂ Memtransistors towards Neuromorphic Computing

[9p-A33-11]Charge-Transfer Complex Modulated MoS₂ Surface for ppb-Level Acetone Sensing at Room Temperature

[9p-A33-12]WS₂–Amorphous Carbon Heterointerfaces for Humidity-Tolerant Sub-ppb NO₂ Sensing

[9p-A33-13]Development of ReRAM based on TaO_x_/TaS₂ heterostructures

[9p-A33-14]Mechanistic Study of Water-Induced Operational Instability in MoS₂ FETs

[9p-A33-15]First-Principles Investigation of Irradiation-Induced Mo-Doped TiS₂ for Advanced NO₂ Gas Detection

[9p-A33-16]A DFT Study of Au-Functionalized MoSe₂ via Irradiation for Advanced NO₂ Gas Detection