[9p-A33-1~16] 17.3 Applications

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-A33-8] Carrier type control by ion implantation in MoS₂ thin films and TFT characteristics.

〇Masamichi Tsuchida¹, Toshimasa Ui², Yuya Yamane², Keisuke Yasuta², Satoru Sonezaki², Kousaku Shimizu (1.Nihon Univ., 2.Nissin Ion Equipment Co., Ltd.)

Keywords:

two dimensional material,Molybdenum sulfide,Thin-film transistors

We are conducting research using MoS₂, a layered material, to fabricate transistors for large-area displays. This research aims to improve the performance of TFTs while reducing manufacturing costs. As part of cost reduction efforts, we changed the atomic processing method to an ion implantation method, which offers better mass-production capabilities, and evaluated the transfer characteristics.