[9p-B11-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-1] Solid phase epitaxy of rutile-type GeO₂ films under high pressure

〇Keiji Shibata¹, Ryota Noda¹, Fumio Kawamura², Hitoshi Yusa², Masashi Miyakawa², Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS)

Keywords:

rutile-type GeO2,high pressure,solid phase epitaxy