[9p-B11-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices" | The 87th JSAP Autumn Meeting 2026

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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-B11-1~11]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2026 4:00 PM - 7:00 PM JST
Wed. Sep 9, 2026 7:00 AM - 10:00 AM UTC

B11 (Faculty of Engineering B Block)

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-1]Solid phase epitaxy of rutile-type GeO₂ films under high pressure

〇Keiji Shibata¹, Ryota Noda¹, Fumio Kawamura², Hitoshi Yusa², Masashi Miyakawa², Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS)

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-2]Electrical transport properties of Sb-doped rutile-type GeO₂ thin films synthesized by solid-phase epitaxy

〇(M2)Shohei Osawa¹, Hiroaki Hanafusa², Daichi Oka¹, Yasushi Hirose¹ (1.Tokyo Metropolitan Univ., 2.Hiroshima Univ.)

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-3]Temperature Dependence of Crystal Phase Formation in GeO₂ Growth by Oxide Vapor Phase Epitaxy

〇Haru Nakano¹, Shigeyoshi Usami¹, Masayuki Imanishi¹, Yusuke Mori¹ (1.UOsaka)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-4]Hydrogen Doping and Ion Conduction in Rutile-type GeO₂ via Hydrogen Plasma Treatment

〇Tomoya Suzuki¹, Keisuke Ide¹, Takayoshi Katase^1,2, Hidenori Hiramatsu^1,2, Hideo Hosono¹, Toshio Kamiya¹ (1.MDXES, Science Tokyo, 2.MSL, Science Tokyo)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-B11-5]Formation and evaluation of n-type conductive films on r-GeO₂ bulk substrates

〇Kentaro Kawanishi¹, Yuri Shimizu¹, Toyosuke Ibi¹, Shinpei Matsuda¹ (1.Patentix Inc.)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-6]Investigation of the Phase Stabilization of Rutile GeO₂ via Lattice Mismatch Engineering

〇Kazuki Shimazoe¹, Masashi Kato¹ (1.Nagoya Inst. Tech.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-7]Effect of growth temperature on the growth of r-GeO₂(101) thin films by Mist CVD

〇Naoki Kita¹, Ichiro Seike¹, Hiroki Miyake^1,2, Hiroyuki Nishinaka¹ (1.Kyoto Inst. Tech, 2.MIRISE Technologies Corp.)

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-8]Controlling the Conductivity of Sb-doped r-GeO₂ thin films by Mist CVD

〇Ichiro Seike¹, Hiroki Miyake^1,2, Hiroyuki Nishinaka¹ (1.Kyoto Inst.Tech, 2.MIRISE Tech Corp.)

6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[9p-B11-9]Infrared reflectance spectroscopy of r-GeO₂ epilayers on sapphire substrates

〇Kazutaka Kanegae¹, Naoki Kita¹, Ichiro Seike¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech.)

6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[9p-B11-10]Vertical Schottky barrier diodes with heavily-doped n-type r-GeO₂ epilayers grown on (001) TiO₂ substrate

〇Kazutaka Kanegae¹, Kazuki Shimazoe², Ichiro Seike¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech., 2.Nagoya Inst. of Tech.)

6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-11]Electron traps in as-grown n-type r-GeO₂ epilayers

〇Kazutaka Kanegae¹, Kazuki Shimazoe², Ichiro Seike¹, Naoki Kita¹, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech., 2.Nagoya Inst. of Tech.)

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