[9p-B11-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-2] Electrical transport properties of Sb-doped rutile-type GeO₂ thin films synthesized by solid-phase epitaxy

〇(M2)Shohei Osawa¹, Hiroaki Hanafusa², Daichi Oka¹, Yasushi Hirose¹ (1.Tokyo Metropolitan Univ., 2.Hiroshima Univ.)

Keywords:

GeO2,Wide bandgap semiconductor,Oxide semiconductor

Rutile-type GeO₂(r-GeO₂) holds great promise for applications in power electronics. In this study, we successfully synthesized uniformly crystallized single-crystal thin films of Sb-doped r-GeO₂ via solid-phase epitaxy, which was achieved by annealing and crystallizing amorphous GeO₂ thin films deposited at a low temperature. In the presentation, we will discuss the relationship between the Sb doping concentration and both the crystal growth and electrical conduction properties.