[9p-B11-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-3] Temperature Dependence of Crystal Phase Formation in GeO₂ Growth by Oxide Vapor Phase Epitaxy

〇Haru Nakano¹, Shigeyoshi Usami¹, Masayuki Imanishi¹, Yusuke Mori¹ (1.UOsaka)

Keywords:

GeO2,OVPE,Crystal Growth

The growth temperature dependence of crystal phase formation in GeO₂ grown by OVPE was investigated. At 643 °C, both r-GeO₂ and α-GeO₂ were formed. At 706 °C, single-phase r-GeO₂ was obtained, whereas no GeO₂ growth was observed at 746 °C. Surface observations and immersion tests revealed that r-GeO₂ formed as a thin film, while α-GeO₂ formed as crystalline grains.