Presentation Information
[9p-B11-4]Hydrogen Doping and Ion Conduction in Rutile-type GeO2 via Hydrogen Plasma Treatment
〇Tomoya Suzuki1, Keisuke Ide1, Takayoshi Katase1,2, Hidenori Hiramatsu1,2, Hideo Hosono1, Toshio Kamiya1 (1.MDXES, Science Tokyo, 2.MSL, Science Tokyo)
Keywords:
Wide-Band-Gap Oxide semiconductor,Germanium Oxide,Hydrogen doping
Rutile-type GeO2 is considered a promising ultra-wide bandgap oxide semiconductor capable of ambipolar conduction, but an effective doping technique has not yet been established. Severe re-evaporation and formation of amorphous phase during the film growth process have been obstacles to doping control. In this study, by adopting a post-process utilizing hydrogen plasma treatment, we demonstrated electrical conductivity in r-GeO2. Furthermore, through electrical characterization and first-principles calculations, we revealed the coexistence of ionic and electronic conduction attributed to interstitial hydrogen.