[9p-B11-1~11] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-B11-7] Effect of growth temperature on the growth of r-GeO₂(101) thin films by Mist CVD

〇Naoki Kita¹, Ichiro Seike¹, Hiroki Miyake^1,2, Hiroyuki Nishinaka¹ (1.Kyoto Inst. Tech, 2.MIRISE Technologies Corp.)

Keywords:

Germanium oxide,GeO2,Mist CVD

r-GeO₂ is considered a promising next-generation power semiconductor material because of its wide bandgap of 4.6 eV, the theoretically predicted possibility of both p-type and n-type doping, and the feasibility of bulk crystal growth. Although epitaxial growth of r-GeO₂ has been reported, achieving high-quality films with smooth surface morphology remains a challenge. In this study, the growth temperature was varied using the Mist CVD method to achieve r-GeO₂ thin films with improved surface flatness.