[9p-E208-1~11] 7.3 Micro/Nano patterning and fabrication

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[9p-E208-2] Evaluation of Resist-Process-Induced Aggregation by RSoXS

〇Ayumu Tanaka¹, Shinji Yamakawa¹, Masashi Yoshimura², Naoki Hayase¹, Tetsuo Harada¹ (1.Uni. of Hyogo, 2.SPring-8 Service.)

Keywords:

semiconductor,lithography,RSoXS

To reduce line width roughness in EUV lithography, it is important to evaluate the nanoscale structure inside resist thin films. In this study, we used reflection-mode RSoXS to investigate how resist processes, such as exposure and PEB, affect the internal structure of thin films by comparing the scattering profiles of Polymer and CAR. In addition, measurements at non-resonant and resonant energies were compared to evaluate internal structural changes related to chemical structure.