Presentation Information
[9p-E208-3]High-Dynamic-Range Optical Constant Measurements for Short-Wavelength EUV Lithography Using a CMOS Detector
〇(M1)Ryosuke Bogaki1, Naoki Hayase1, Masashi Yoshimura2, Shinji Yamakawa1, Tetsuo Harada1 (1.University of Hyogo, 2.SPring-8 Service Co., Ltd.)
Keywords:
Short-Wavelength EUV,CMOS Detector,Optical Constant Measurements
With the expansion of AI technologies, high-performance and energy-efficient semiconductors are increasingly required. For next-generation lithography beyond EUV, shorter wavelengths such as 6.7 nm and 3.1 nm are being investigated. Since optical constants of resists and optical materials, which are fundamental data for research and development, are obtained by fitting angular reflectivity curves, high-precision measurements with a wide dynamic range are essential. In this study, a soft X-ray CMOS sensor (Gpixel G400BSI) was introduced into the BL10 reflectometer at the NewSUBARU Synchrotron Radiation Facility, replacing the conventional Si photodiode. A 30 nm-thick ZEP520A electron-beam resist film coated on a Si wafer was measured at a wavelength of 3.1 nm. As a result, the dynamic range was improved from approximately four orders of magnitude to seven orders of magnitude. This improvement enables accurate optical constant measurements even in low-reflectivity regions that were previously difficult to detect, contributing to the advancement of short-wavelength EUV research and development.