Presentation Information
[9p-E208-6]Effect of Organic Ligand Structure on Resist Performance of Organic-Inorganic Hybrid Resists for EB and EUV Lithography
〇Hiroki Yamamoto1, Takashi Hamada1, Takahiro Kozawa2 (1.QST, 2.SANKEN Osaka Univ.)
Keywords:
resist material,EUV lithography,Organic-inorganic hybrid resist
In this study, the inorganic-organic hybrid resist materials composed of salicylic acid as organic ligand was synthesized and we examined the effect of organic ligand structure on resist performances such as resolution and sensitivity using EB and EUV lithography system. Our results indicated that the EB and EUV sensitivity in Zr-based oxo cluster composed of salicylic acid was lower than those of Zr-based oxo clusters with other organic ligands such as methacrylic acid, tiglic acid, trans-cinnamic acid and so on. Although the exposure dose was not optimized, the patterns of Zr-based oxo clusters with salicylic acid showed 50 nm line and space patterns with the dose of 10 mC/cm2.