Presentation Information

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[9p-E215-11]Development of a Process for Fabricating Non-Volatile Memory Using Fluorinated Graphene and Elucidation of the Charge Trapping Mechanism

Kohei Mashimo¹, Ryoichi Kawai¹, Jiayi Tang², Ryousuke Ishikawa¹, Yuichiro Mitani¹, 〇Hiroshi Nohira¹ (1.Tokyo City Univ., 2.JASRI)

Keywords:

graphene,graphene fluoride,Atomic layer deposition

Graphene (Gr), a two-dimensional layered material, can be converted into insulating fluorinated graphene (FGr) through fluorination, and the operation of non-volatile memory using FGr as a charge trapping layer has been demonstrated. However, a major challenge has been the extremely low yield. In this study, we achieved uniform ALD-Al₂O₃ deposition on FGr using a TCNQ monolayer. Furthermore, we improved the yield by removing the FGr outside the immediate vicinity of the electrode via dry etching. In addition, we aimed to improve memory characteristics and elucidate the charge trapping mechanism by stacking layers of FGr.

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