Session Details

[9p-E215-1~20]17.3 Applications

Wed. Sep 9, 2026 1:30 PM - 6:45 PM JST
Wed. Sep 9, 2026 4:30 AM - 9:45 AM UTC
E215 (First Year Education Bld. E Block)

[9p-E215-1]Growth of Multilayer Graphene by CVD using a Cu-Ni foil catalyst
and its photovoltaic applications

〇Masahiro Teraoka1, Hojun Im1 (1.Hirosaki Univ.)

[9p-E215-2]Contact angle measurements on transparent EWOD devices using CVD graphene electrodes

〇(M1)Shunya Matsumoto1, Shiguma Aoki1, Masashi Takagi2, Kazuyuki Shiratori2, Takeshi Watanabe1, Shinji Koh1 (1.Aoyama Gakuin Univ., 2.Nissan Motor Co.)

[9p-E215-3]Transparent AC-EWOD Devices for Water Droplet Removal Using Graphene Electrodes

〇(M2)Shiguma Aoki1, Shunya Matsumoto1, Masashi Takagi2, Kazuyuki Shiratori2, Watanabe Takeshi1, Shinji Koh1 (1.Aoyama Gakuin Univ., 2.Nissan Motor Co.)

[9p-E215-4]Graphene-on-Graphene broadband room-temperature photodetector

〇Masaaki Shimatani1, Iwakawa Manabu1, Shoichiro Fukushima1, Shinpei Ogawa1 (1.Mitsubishi Electric)

[9p-E215-5]Efficient THz emission from 2D van der Waals ferroelectric semiconductor NbOI2

〇Taketo Handa1, Chun Ying Huang1, Jeongheon Choe1, Yiliu Li1, Nick Olsen1, Daniel Chica1, David Xu1, Felix Sturm1, James McIver1, Xavier Roy1, Xiaoyang Zhu1 (1.Columbia Univ.)

[9p-E215-6]Influence of Temperature Difference at Graphene-Fluid Interface on Electromotive Force

〇Shun Nishiya1, Mitsuhiro Honda2, Masaki Tanemura2, Ichiro Yamashita3, Atsuki Komiya1, Takeru Okada1 (1.Tohoku Univ., 2.NITech., 3.Osaka Univ.)

[9p-E215-7]Relation between Generated Electrical Current and Gate Voltage at Graphene-Fluid Interface

〇Shunsuke Minami1, Mitsuhiro Honda2, Masaki Tanemura2, Ichiro Yamashita3, Atsuki Komiya1, Takeru Okada1 (1.Tohoku Univ., 2.NITech., 3.Osaka Univ.)

[9p-E215-8]Developing delamination and transfer technique of single-crystalline SiH thin film toward transistor application

〇Tetsushi Miyamoto1, Tsukasa Terada1, Takafumi Ishibe1,2, Yoshiaki Nakamura1,2 (1.Grad. School. Eng. Sci. UOsaka, 2.OTRI-Spin UOsaka)

[9p-E215-9]Development of a thickness-controlled growth method for epitaxial CaSi2 thin films on Si substrates and their thermoelectric properties

〇Tsukasa Terada1, Takashi Yoshizaki1, Takafumi Ishibe1,2, Nobuyasu Naruse3, Yoshiaki Nakamura1,2 (1.Grad. School of Eng. Sci. Univ Osaka, 2.OTRI, 3.Shiga Univ. Med. Sci.)

[9p-E215-10]Structural Origin of Highly Transparent Contacts in Graphene/MoRe Josephson Junctions

〇Hiroto Ogura1,2, Yuto Tsukidate1,2, Zhuoqun Li1,2, Azusa Utsumi2, Tomohiro Otsuka1,2,3, Mitsuhiro Saito4, Shun Kondo2,4, Kazutoshi Inoue2, Takashi Taniguchi5, Kenji Watanabe5, Yuichi Ikuhara2,4,6, Toshiaki Kato1,2 (1.Grad. Sch. of Eng., Tohoku Univ., 2.AIMR, Tohoku Univ., 3.RIEC, Tohoku Univ., 4.Sch. of Eng., The Univ. of Tokyo, 5.NIMS, 6.JFCC)

[9p-E215-11]Development of a Process for Fabricating Non-Volatile Memory Using Fluorinated Graphene and Elucidation of the Charge Trapping Mechanism

Kohei Mashimo1, Ryoichi Kawai1, Jiayi Tang2, Ryousuke Ishikawa1, Yuichiro Mitani1, 〇Hiroshi Nohira1 (1.Tokyo City Univ., 2.JASRI)

[9p-E215-12]A study of resistive switching phenomenon in graphene/sumanene/graphene structure using AR-HAXPES

〇Ryoichi Kawai1, Kana Tabata1, Hyunjun Kim1, Kaito Kimishima1, Shion Kaneko1, Yoshiharu Kirihara1, Hiroshi Nohira1, Ryousuke Ishikawa1, Mitani Yuichiro1 (1.Tokyo City Univ.)

[9p-E215-13]Multisite Adsorption Mechanisms and Electrical Response Characteristics of NO2 in Co Phthalocyanine Modified Graphene FETs

〇(M1)Jun Murakami1, Nishiki Matsubayashi1, Mina Maruyama2, Yanlin Gao2, Susumu Okada2, Kenzo Maehashi1 (1.TUAT, 2.Univ. of Tsukuba)

[9p-E215-14]Bandgap Tuning of Black Phosphorus via Ozone Oxidation for FET applications

〇(M2)Shohei Nagata1, Mitsuru Inada1, Mahito Yamamoto1 (1.Kansai Univ.)

[9p-E215-15]Electrical Resistance Tomography-Based Physical Unclonable Function Using Multiscale Randomness in Laser-Induced Graphene

〇Keiya Minakawa1, Yuki Kimura1, Issa Asahara1, Nobuyuki Masuda1, Takashi Ikuno1 (1.Tokyo Univ. of Sci.)

[9p-E215-16]Product Analysis of Light Alkane Decomposition by Hot Carriers Generated in 2D Material-Based Tunnel Junctions

〇(M2)Koki Kamiya1, Ryo Nouchi1 (1.Osaka Metro. Univ.)

[9p-E215-17]Spacer size and density effects in graphene/nanospacer stacked films toward uniform Fermi level control

〇Shinnosuke Yoshida1, Taiki Inoue1, Yoshihiro Kobayashi1,2 (1.Univ. of Osaka Eng., 2.Toyo Univ.)

[9p-E215-18]Atomic Layer Deposition of Ultrathin Alumina Films on 2D Oxide Nanosheets

〇(M1)Yuiki Uejima1, Wataru Sugimoto2, Ryo Nouchi1 (1.Osaka Metropolitan Univ., 2.Shinshu Univ.)

[9p-E215-19]Multi-hole transport and carrier density modulation in GeH/Ge(111)

〇Hiroka Otomo1, Hikaru Okuma1, Yuhsuke Yasutake1, Susumu Fukatsu1, Kazunori Ueno1 (1.Grad. School of Arts and Sci., UTokyo)

[9p-E215-20]Effect of Liquid Polarity on Infiltration Behavior in Metal-Organic Frameworks Nanopores

〇Ayumu Mochizuki1, Yumeng Zheng1, Kentaro Kinoshita1 (1.Tokyo Univ. of Sci.)