[9p-E215-1~20] 17.3 Applications

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-E215-8] Developing delamination and transfer technique of single-crystalline SiH thin film toward transistor application

〇Tetsushi Miyamoto¹, Tsukasa Terada¹, Takafumi Ishibe^1,2, Yoshiaki Nakamura^1,2 (1.Grad. School. Eng. Sci. UOsaka, 2.OTRI-Spin UOsaka)

Keywords:

flexible transistor,delamination-transfer technique,Silicane

High-performance flexible transistors are fabricated by delamination-transfer techniques, where films are delaminated from inflexible substrates and then transferred on flexible substrates. In recent years, silicane (SiH), hydrogen-terminated Silicene, is attracting much attention because of its ultrahigh mobility and large energy bandgap. However, there have been no delamination and transfer techniques. In this study, we develop the delamination-transfer technique of single-crystalline SiH films/Si substrates using the electrochemical method.