Presentation Information
[9p-E215-9]Development of a thickness-controlled growth method for epitaxial CaSi2 thin films on Si substrates and their thermoelectric properties
〇Tsukasa Terada1, Takashi Yoshizaki1, Takafumi Ishibe1,2, Nobuyasu Naruse3, Yoshiaki Nakamura1,2 (1.Grad. School of Eng. Sci. Univ Osaka, 2.OTRI, 3.Shiga Univ. Med. Sci.)
Keywords:
Silicene,Epitaxial growth,Thermoelectric material
Silicene, a two-dimensional atomic layer of silicon, has attracted considerable attention as a post-graphene material because of its high carrier mobility comparable to that of graphene. However, silicene is unstable under ambient conditions, making its practical realization challenging. We focused on CaSi2, in which Ca layers are intercalated between multilayer silicene, resulting in improved air stability. The objective of this study is to establish a fabrication method for CaSi2 thin films using a co-deposition technique that enables precise control of both film thickness and composition, and to clarify their thermoelectric properties.