[9p-E311-1~21] CS.7 Code-sharing session of 6.1 & 15.4

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[9p-E311-1] Sc/(Al+Sc) Ratio- and Thickness-Dependent Crystallinity and Ferroelectricity in (Al_1-xSc_x)N Thin Films

〇(D)Soshun Doko^1,2, Naoko Matsui¹, Toshikazu Irisawa¹, Koji Tsunekawa¹, Kazuki Okamoto², Hiroshi Funakubo² (1.Canon ANELVA, 2.Science Tokyo)

Keywords:

AlScN,logic-embedded memory,Ferroelectric memory

Logic-embedded memory, in which circuits and memory are integrated on the same chip, has attracted significant attention. In this work, we aim to apply (Al_1-xSc_x)N films to logic-embedded memory and have successfully achieved thickness scaling of the stack to a total thickness of 30 nm, enabling integration within interconnect layers. However, for practical application to logic-embedded memory, further reduction in operating voltage is required, which necessitates both lowering the coercive field by increasing the Sc/(Al+Sc) ratio and further reducing the (Al_1-xSc_x)N film thickness. In this work, we systematically evaluated the film properties of (Al_1-xSc_x)N with various thicknesses while varying the Sc/(Al+Sc) ratio.