The 87th JSAP Autumn Meeting 2026
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Oral presentationCS Code-sharing session : 【CS.7】Code-sharing session of 6.1 & 15.4

[9p-E311-1~21]CS.7 Code-sharing session of 6.1 & 15.4

Wed. Sep 9, 2026 1:15 PM - 7:00 PM JST
Wed. Sep 9, 2026 4:15 AM - 10:00 AM UTC
E311 (First Year Education Bld. E Block)
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[9p-E311-1]Sc/(Al+Sc) Ratio- and Thickness-Dependent Crystallinity and Ferroelectricity in (Al1-xScx)N Thin Films

〇(D)Soshun Doko1,2, Naoko Matsui1, Toshikazu Irisawa1, Koji Tsunekawa1, Kazuki Okamoto2, Hiroshi Funakubo2 (1.Canon ANELVA, 2.Science Tokyo)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-2]Ferroelectric properties of ScAlN/AlN/GaN structures with varied AlN interlayers

〇Sawaki Sato1, Kazuhisa Ikeda1, Kosuke Joya2, Takuya Maeda2, Hiroshi Funakubo3, Atsushi Kobayashi1 (1.Tokyo Univ. of Science, 2.The Univ. of Tokyo, 3.Institute of Science Tokyo)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-3]Lattice Strain and Ferroelectric Properties of Low-Temperature-Deposited Epitaxial AlScN Thin Films on Si Substrates

〇(M2)Yusuke Aoki1, Koki Yasuoka1, Takeshi Yoshimura1,2 (1.Osaka Metro. Univ., 2.Toyohashi Univ. Tech.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[9p-E311-4]Enhancement of piezoelectric constants in ScAlN thin films by introducing a Lu buffer layer

〇Kenji Hirata1, Kodai Niitsu2, Sri Ayu Anggraini1, Taisuke Kageura1, Masato Uehara1, Hiroshi Yamada1, Morito Akiyama1 (1.AIST, 2.NIMS)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[9p-E311-5]Microstructural characterization of ScAlN thin film by 4D-STEM cepstrum matching

〇Kodai Niitsu1, Kenji Hirata2, Katsuaki Nakazawa1, Kazutaka Mitsuishi1, Sri Ayu Anggraini2, Masato Uehara2, Morito Akiyama2 (1.NIMS, 2.AIST)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[9p-E311-6]Preparation of High Sc concentration ScAlN on Si substrate by sputtering method

〇Masato Uehara1,2, Akira Gyotoku1, Kenji Hirata1, Kodai Niitsu3, Sri Ayu Anggraini1, Raiki Toyota2, Morito Akiyama1 (1.AIST, 2.Kyusyu Univ., 3.NIMS)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-7]Growth of ScAlN on GaN Templates by RF-MBE Method

〇Hayato Nishi1, Ryusei Maeda1, Yuma Tada1, Trang Nakamoto2, Md.Earul Islam3, Takashi Fujii3, Ryuichi Sugie1, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-8]Characterization of leakage current and photocurrent in ScAlN/GaN grown by PA-MBE

〇Kosuke Joya1, Kouei Kubota1, Hikaru Sasaki1, Ryosho Nakane1, Takuya Maeda1 (1.UTokyo)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-9]Design of AlN/ScAlN/AlN Transverse Quasi-Phase-Matched Waveguide for 230 nm Far-UV Second Harmonic Generation

〇Takumi Wada1, Yuki Takeuchi1, Meiko Shi1, Masahiro Uemukai1, Ryuji Katayama1 (1.The Univ. of Osaka)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-10]Physical Reservoir Computing Utilizing Resistive Switching in Ferroelectric AlScN

〇Koki Yasuoka1, Yusuke Aoki1, Yu Ukezeki1, Takeshi Yosimura1,2 (1.Osaka Metro Univ., 2.Toyohashi Univ. Tech)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[9p-E311-11]Polarization switching characteristics in wurtzite structured ferroelectric thin films fabricated by sputtering

〇Kazuki Okamoto1, Shunpei Kawano1, Soshun Doko1, Ryoma Asoshina2, Hiroya Oiso3, Sotaro Kageyama1, Yoshiko Nakamura1, Masato Uehara2,4, Takeshi Yoshimura3,5, Isaku Kanno6, Hiroshi Funakubo1 (1.Science Tokyo, 2.Kyushu Univ., 3.Osaka Metro. Univ., 4.AIST, 5.Toyohashi Univ. Tech., 6.Kobe Univ.)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)English Presentation

[9p-E311-12]Deposition and Ferroelectricity of Boron-doped (Al, Sc)N Thin Films

〇(M2C)PANGSHENG WANG1,2, SHIMIZU TAKAO1,2, FUNAKUBO HIROSHI1 (1.Tokyo Science, 2.NIMS)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-13]Influence of oxygen incorporation on lattice constants and crystallinity in AlBN thin films

〇Miyu Kawai1, Ken Shiraishi1, Kyota Mikami1, Tsunenobu Kimoto1, Mitsuaki Kaneko1 (1.Kyoto Univ.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-14]Growth and crystal structure analysis of AlYN layers grown by MOCVD

〇Shun Narita1, Yudai Shimizu1, Daisuke Iida1, Keitaro Ikejiri1, Kazutada Ikenaga1 (1.Nippon Sanso Corp.)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[9p-E311-15]Epitaxial Growth of BAlN Films on SiC Substrates by Sputtering

〇Kazuhisa Ikeda1, Yuto Shibuya1, Atsushi Kobayashi1 (1.Tokyo Univ. of Science)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[9p-E311-16]Growth temperature dependence of structural properties of sputter-grown NbAlN films on GaN

〇Souta Kurogi1, Misato Tsuji2, Riku Kikuchi1, Kazuhisa Ikeda1,2, Atsushi Kobayashi1,2 (1.Grad. School of Tokyo Univ. of Science, 2.Tokyo Univ. of Science)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[9p-E311-17]First-Principles Study of Structural Stability and Electronic Structure of NbAlN alloys

〇Takahiro Kawamura1, Toru Akiyama1, Riku Kikuchi2, Souta Kurogi2, Atushi Kobayashi2, Akira Kusaba3, Yoshihiro Kangawa3 (1.Mie Univ., 2.Tokyo Univ. of Science, 3.RIAM, Kyushu Univ.)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)

[9p-E311-18]Investigation of electric-filed-induced polarity inversion
in single-crystal AlN films deposited by selective growth

〇Takashi Kimura1, Koji Terumoto1, Yoshiaki Oku1 (1.ROHM Co., Ltd.)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)

[9p-E311-19]Improved Oxygen Robustness of AlN Film Growth Using an Al-Sheet-Assisted Sputtering Targe

〇Akihiko Teshigahara1, Shinya Yoshida1 (1.Shibaura Inst. Tech.)
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)

[9p-E311-20]Exploration of Area-Selective Control Method of Spontaneous Polarization Direction of AlN Thin Film for PMUT Application

〇Shinsuke Ukita1, Akihiko Teshigahara1, Shinya Yoshida1 (1.Shibaura Univ.)
6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[9p-E311-21]Fabrication and Crystalline Evaluation of High-Quality GaN Thin Films Sputtered on Multi-functional Inter Layers.

〇Masashi Seki1, Takeshi Kijima1, Kunimasa Takahashi1, Isao Kimura1, Kento Nakao1 (1.Gaianixx Inc)
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