Presentation Information

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-13]Influence of oxygen incorporation on lattice constants and crystallinity in AlBN thin films

〇Miyu Kawai¹, Ken Shiraishi¹, Kyota Mikami¹, Tsunenobu Kimoto¹, Mitsuaki Kaneko¹ (1.Kyoto Univ.)

Keywords:

AlBN,ferroelectric

To achieve high-temperature integrated circuits, it is crucial to obtain high-quality characteristics in the AlBN/SiC structure. In this study, we evaluated the effect of oxygen incorporated during growth on AlBN within the AlBN/SiC structure. As a result, we found that the c-axis length of AlBN increases monotonically depending on the amount of incorporated oxygen, rather than the boron composition. Furthermore, we report the observation of the minimum full width at half maximum (FWHM) in the sputtered AlBN films at an oxygen concentration of approximately 5–6%.

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