[9p-E311-1~21] CS.7 Code-sharing session of 6.1 & 15.4

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-2] Ferroelectric properties of ScAlN/AlN/GaN structures with varied AlN interlayers

〇Sawaki Sato¹, Kazuhisa Ikeda¹, Kosuke Joya², Takuya Maeda², Hiroshi Funakubo³, Atsushi Kobayashi¹ (1.Tokyo Univ. of Science, 2.The Univ. of Tokyo, 3.Institute of Science Tokyo)

Keywords:

ferroelectric,semiconductor,sputtering

ScAlN has attracted attention as a novel ferroelectric material because it exhibits a higher remanent polarization and superior scalability compared with conventional ferroelectrics, and can be epitaxially grown on GaN. In our previous work, we inserted an AlN interlayer at the ScAlN/n-type GaN interface and evaluated its ferroelectric properties. In this study, we focused on the dependence on AlN interlayer thickness and investigated its structural and electrical properties.