[9p-E311-1~21] CS.7 Code-sharing session of 6.1 & 15.4

6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)

[9p-E311-21] Fabrication and Crystalline Evaluation of High-Quality GaN Thin Films Sputtered on Multi-functional Inter Layers.

〇Masashi Seki¹, Takeshi Kijima¹, Kunimasa Takahashi¹, Isao Kimura¹, Kento Nakao¹ (1.Gaianixx Inc)

Keywords:

Epitaxial growth,Single-crystal thin film

GaN, a wide-bandgap semiconductor, is widely applied to power devices and other applications. However, the growth of high-quality films inevitably requires high-temperature MOCVD on sapphire substrates, posing challenges in terms of cost and substrate limitations. In this study, we focused on the Multi-functional Inter Layers, which mitigates lattice strain between dissimilar materials through dynamic lattice matching via martensitic transformation, and attempted to form high-quality single-crystal GaN films using sputtering, a low-cost and low-temperature process. As a result of XRD rocking curve measurements, the full width at half maximum (FWHM) drastically decreased with increasing film thickness, achieving a high crystallinity comparable to that of MOCVD-GaN films on sapphire substrates.