[9p-E311-1~21] CS.7 Code-sharing session of 6.1 & 15.4

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-3] Lattice Strain and Ferroelectric Properties of Low-Temperature-Deposited Epitaxial AlScN Thin Films on Si Substrates

〇(M2)Yusuke Aoki¹, Koki Yasuoka¹, Takeshi Yoshimura^1,2 (1.Osaka Metro. Univ., 2.Toyohashi Univ. Tech.)

Keywords:

ferroelectric thin film,AlScN,wurtzite structure

Thickness scaling of AlScN thin films is essential for low-voltage operation, while control of the interface state and lattice strain becomes increasingly important as the film thickness decreases. In this study, AlScN thin films were deposited on Si(111) substrates at temperatures ranging from room temperature to 320 °C to establish a low-temperature deposition process with reduced thermal load. XRD measurements confirmed epitaxial growth at all growth temperatures, and P–E measurements revealed ferroelectricity in all samples, including the room-temperature-deposited film.