[9p-E311-1~21] CS.7 Code-sharing session of 6.1 & 15.4

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[9p-E311-6] Preparation of High Sc concentration ScAlN on Si substrate by sputtering method

〇Masato Uehara^1,2, Akira Gyotoku¹, Kenji Hirata¹, Kodai Niitsu³, Sri Ayu Anggraini¹, Raiki Toyota², Morito Akiyama¹ (1.AIST, 2.Kyusyu Univ., 3.NIMS)

Keywords:

piezoelectricity,ScAlN,sputtering

ScAlN, widely used for radio-frequency filters, requires higher Sc concentration for further performance enhancement. In this study, high-Sc-concentration ScAlN thin films were prepared on Si substrates without using an intermediate layer. Wurtzite-structured films were successfully obtained even at a Sc concentration of 51 at.%, exhibiting a high piezoelectric coefficient.