[9p-E311-1~21] CS.7 Code-sharing session of 6.1 & 15.4

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-7] Growth of ScAlN on GaN Templates by RF-MBE Method

〇Hayato Nishi¹, Ryusei Maeda¹, Yuma Tada¹, Trang Nakamoto², Md.Earul Islam³, Takashi Fujii³, Ryuichi Sugie¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST)

Keywords:

ScAlN thin films,RF-MBE,Crystal growth

High-quality growth of ScAlN thin films was investigated on GaN templates using radio-frequency molecular beam epitaxy (RF-MBE). The effects of Sc/Al flux ratio and growth temperature on the crystalline quality, surface morphology, and Sc composition were systematically examined. Based on the obtained results, suitable growth conditions for achieving high-quality ScAlN films were discussed.