[9p-E311-1~21] CS.7 Code-sharing session of 6.1 & 15.4

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-E311-8] Characterization of leakage current and photocurrent in ScAlN/GaN grown by PA-MBE

〇Kosuke Joya¹, Kouei Kubota¹, Hikaru Sasaki¹, Ryosho Nakane¹, Takuya Maeda¹ (1.UTokyo)

Keywords:

ScAlN,PA-MBE,photocurrent

ScAlN exhibits a wide bandgap, a large piezoelectric response, strong spontaneous polarization, and ferroelectricity, making it a promising material for realizing new functionalities through integration with GaN devices. Although ferroelectricity in ScAlN/GaN structures has been demonstrated using several crystal growth methods in recent years, reports on MBE-grown ScAlN/GaN structures remain limited. In this study, we fabricate ScAlN/GaN heterostructures by PA-MBE and investigate their structural properties, leakage current characteristics, and photocurrent characteristics.