[9p-N101-1~16] 15.4 III-V-group nitride crystals

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-11] Investigation of Mg concentration profiles in HVPE-grown p-GaN/UID-GaN multilayer structures with varying Mg concentrations

〇Chihiro Nishiwaki¹, Naoki Fujimoto², Atsushi Tanaka², Yoshio Honda^2,3,4, Hiroshi Amano^2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Deep Tech Serial Innovation Center, Nagoya Univ., 4.IAR, Nagoya Univ.)

Keywords:

HVPE,Mg diffusion,GaN

Multilayer structures consisting of p-GaN and UID-GaN layers were grown using a separated-nozzle HVPE reactor that can suppress the influence of the Mg memory effect. The Mg concentration profiles were evaluated by secondary ion mass spectrometry. In the sample with an Mg concentration of 2×10¹⁸ cm⁻³ in the p-GaN layer, the Mg concentration in the UID-GaN layer was below the detection limit (5×10¹⁵ cm⁻³), whereas in the sample with an Mg concentration of 1×10¹⁹ cm⁻³ in the p-GaN layer, an Mg concentration on the order of 10¹⁶ cm⁻³ was observed in the UID-GaN layer. These results suggest that the amount of Mg diffusion varies depending on the Mg concentration and affects the Mg concentration profile.