The 87th JSAP Autumn Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[9p-N101-1~16]15.4 III-V-group nitride crystals

Wed. Sep 9, 2026 1:30 PM - 6:00 PM JST
Wed. Sep 9, 2026 4:30 AM - 9:00 AM UTC
N101 (First Year Education Bld. N Block)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-1]Substrate exfoliation by Multi-Shot Laser Lift-Off for high LEE UV-C LEDs

〇Hiroya Kubo1, Sena Miura1, Haruto Hirota1, Marina Fujita1, Kenta Takase1, Yusuke Kitamura1, Toshihiro Hayashi1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Yoshiki Saitou1,2 (1.Meijo Univ., 2.Toyoda Gosei)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[9p-N101-2]Estimation of changes in IQEs and CIEs by aging of far-UVC LEDs using ABC model

〇Ryota Akaike1,2, Ayato Suzuki1, Hiroki Yasunaga2,3, Kanako Shojiki1,2, Takao Nakamura1,2, Hideto Miyake1,2 (1.Mie Univ. Grad. Sch. of Eng., 2.Mie Univ. IC-SDF, 3.Mie Univ. ORIP)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-3]Electrical Characterization of Polarization-Doped AlGaN Grown at Different Temperatures

〇Haruto Hirota1, Teppei Takehisa1, Marina Fujita1, Yusuke Kitamura1, Toshihiro Hayashi1, Kenta Takase1, Hiroya Kubo1, Yoshiki Saito2, Shigefusa Chichibu3, Kamiyama Satoshi1, Motoaki Iwaya1, Tetsuya Takeuchi1 (1.Fac. Sci & Tec, Meijo Univ., 2.TOYODA GOSEI Co., Ltd., 3.IMRAM-Tohoku Univ.)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[9p-N101-4]Room-temperature luminescence lifetime and vacancies in AlxGa1-xN alloys of high x

〇Shigefusa Chichibu1, Moriyuki Kanno1, Teppei Takehisa2, Haruto Hirota2, Yoshiki Saito3, Akira Uedono4, Tetsuya Takeuchi2 (1.Tohoku Univ., 2.Meijo Univ., 3.Toyoda Gosei Co. Ltd., 4.Univ. Tsukuba)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-5]Ohmic Contact Formation on Al-Rich AlGaN Using a Graded Layer

〇Riku Ando1, Ryota Akaike1,2, Hiroki Yasunaga2,3, Narihiko Maeda4, Hideto Miyake1,2 (1.Grad. Sch. of Eng. Mie Univ., 2.IC-SDF Mie Univ., 3.ORIP Mie Univ., 4.Tokyo Univ. of Technology)
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-6]Investigation of the Temperature Dependence of Oxygen Content in Ga-Na Melts via Electrical Resistance Measurements in the Na-Flux Method

〇Kan Ueda1, Masayuki Imanishi1, Kosuke Murakami1, Shigeyoshi Usami1, Mihoko Maruyama1, Masashi Yoshimura1,2, Yusuke Mori1 (1.Grad. Sch. of Eng. The university of Osaka., 2.ILE, The university of Osaka)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-7]Suppression of Inclusions in Na-Flux-Grown GaN Crystals by Oxygen-Impurity-Induced Facet Growth

〇Gen Nishio1, Masayuki Imanishi1, Ritsuko Higashiyama1, Mitsutoshi Ueda1, Kosuke Murakami1, Shigeyoshi Usami1, Mihoko Maruyama1, Masashi Yoshimura1,2, Yusuke Mori1 (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.ILE, The Univ. of Osaka)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-8]Reduction of Large Pits by Growing GaN on N-Polar Surfaces Using OVPE

〇Taku Wakasa1, Shigeyoshi Usami1, Masayuki Imanishi1, Mihoko Maruyama1, Masashi Yoshimura2, Yoshio Okayama3, Junichi Takino3, Tomoaki Sumi3, Masahiko Hata4, Masashi Isemura5, Yusuke Mori1 (1.UOsaka, 2.ILE, UOsaka, 3.Panasonic Holdings Corp, 4.Itochu Plastics Inc, 5.Sosho-Ohshin Inc)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-N101-9]Semi-Insulating Zn-Doped GaN Grown by an Acidic Ammonothermal Method

〇Takayuki Ishinabe1, Takuya Hirosawa1, Tatsuya Takahashi1, Yuji Kagamitani1, Kenji Iso1,2, Satoru Izumisawa1 (1.Mitsubishi Chemical, 2.Nagoya University)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[9p-N101-10]P-type GaN grown by quartz free hydride vapor phase epitaxy

〇Shota Kaneki1, Osamu Ichikawa1, Hajime Fujikura1 (1.Sumitomo Chemical)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-11]Investigation of Mg concentration profiles in HVPE-grown p-GaN/UID-GaN multilayer structures with varying Mg concentrations

〇Chihiro Nishiwaki1, Naoki Fujimoto2, Atsushi Tanaka2, Yoshio Honda2,3,4, Hiroshi Amano2,3,4 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Deep Tech Serial Innovation Center, Nagoya Univ., 4.IAR, Nagoya Univ.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[9p-N101-12]Evaluation of Doping Trends in the Polymorphs of Ⅲ-Nitride Semiconductors

〇Ryu Kawashima1, Hitoshi Mizuno1, Kimihisa Matsumoto1, Yuichi Ota1 (1.Toyama Pref. Univ.)
5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-13]Activation of Heavily Mg-Doped GaN via High-Pressure Annealing

〇Riki Kanetake1, Fumio Kawamura2, Masashi Miyakawa2, Hitoshi Yusa2, Naoomi Yamada1 (1.Chubu Univ., 2.NIMS)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-14]Mg-annealing process on p-AlGaN for realizing ultraviolet-light-transparent p-type ohmic contact layer

〇Shun Lu1, Kazuto Shibata2, Maki Kushimoto2, Manato Deki3, Yoshio Honda1,3,4, Hiroshi Amano1,3,4 (1.IMaSS Nagoya U., 2.Nagoya Univ., 3.D center Nagoya U., 4.IAR Nagoya U.)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-15]Automated Classification of Threading Dislocations in GaN Substrates Using X-ray Topography Images and Deep Learning

〇Ryuya Narukawa1, Kazuki Ohnishi1, Yongzhao Yao1 (1.Mie Univ.)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-16]Evaluation of Contact Characteristics on Low-Temperature-Grown p-GaN Toward High-Efficiency Nitride-Based Red LEDs

〇Yuki Oba1, Ritsuki Ninomiya1, Ai Sakakibara1, Minori Kinoshita1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Kazumasa Niwa2, Atsushi Suzuki2 (1.Meijo University, 2.E&E Evolution Ltd.)
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