[9p-N101-1~16] 15.4 III-V-group nitride crystals

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-13] Activation of Heavily Mg-Doped GaN via High-Pressure Annealing

〇Riki Kanetake¹, Fumio Kawamura², Masashi Miyakawa², Hitoshi Yusa², Naoomi Yamada¹ (1.Chubu Univ., 2.NIMS)

Keywords:

Magnesium-doped gallium nitride,Vertical device,High pressure