[9p-N101-1~16] 15.4 III-V-group nitride crystals

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-14] Mg-annealing process on p-AlGaN for realizing ultraviolet-light-transparent p-type ohmic contact layer

〇Shun Lu¹, Kazuto Shibata², Maki Kushimoto², Manato Deki³, Yoshio Honda^1,3,4, Hiroshi Amano^1,3,4 (1.IMaSS Nagoya U., 2.Nagoya Univ., 3.D center Nagoya U., 4.IAR Nagoya U.)

Keywords:

UV-LED,AlGaN,ohmic contact

In recent years, AlGaN-based ultraviolet (UV) LEDs have attracted significant attention due to their potential applications in various fields, such as water purification. To realize an ideal UV LED with high external quantum efficiency (EQE), a UV-transmissive contact layer on p-AlGaN is essential. To achieve this goal, we developed a technique called the “Mg-annealing process” in this study. A UV-transmissive ohmic contact layer was successfully formed on p-AlGaN with an Al composition of 60%. This achievement is expected to pave the way for the fabrication process of ideal AlGaN-based UV LEDs.