[9p-N101-1~16] 15.4 III-V-group nitride crystals

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-16] Evaluation of Contact Characteristics on Low-Temperature-Grown p-GaN Toward High-Efficiency Nitride-Based Red LEDs

〇Yuki Oba¹, Ritsuki Ninomiya¹, Ai Sakakibara¹, Minori Kinoshita¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Kazumasa Niwa², Atsushi Suzuki² (1.Meijo University, 2.E&E Evolution Ltd.)

Keywords:

low-temperature-grown p-GaN,contact resistance

In this study, to extract academic bottlenecks in contact formation on low-temperature-grown (LT) p-GaN, Ni/APC electrodes were deposited on LT-p-GaN with varying Cp₂Mg concentrations, followed by C-TLM and I-V measurements. Although increasing the Cp₂Mg flow rate reduced the contact resistance on LT-p-GaN, the values remained three to five orders of magnitude higher than those of conventional high-temperature-grown p-GaN. These results suggest that contact formation on LT-p-GaN is involved with a decrease in Mg activation efficiency and degradation of crystal quality, indicating that essential challenges unique to low-temperature growth still remain.