Presentation Information

[9p-N101-4]Room-temperature luminescence lifetime and vacancies in AlxGa1-xN alloys of high x

〇Shigefusa Chichibu1, Moriyuki Kanno1, Teppei Takehisa2, Haruto Hirota2, Yoshiki Saito3, Akira Uedono4, Tetsuya Takeuchi2 (1.Tohoku Univ., 2.Meijo Univ., 3.Toyoda Gosei Co. Ltd., 4.Univ. Tsukuba)

Keywords:

Nitride semiconductor,Deep ultraviolet LEDs,AlGaN alloys

Relationship between the room-temperature luminescence lifetime and vacancies in AlxGa1-xN alloys of high x will be discussed.