[9p-N101-1~16] 15.4 III-V-group nitride crystals

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N101-7] Suppression of Inclusions in Na-Flux-Grown GaN Crystals by Oxygen-Impurity-Induced Facet Growth

〇Gen Nishio¹, Masayuki Imanishi¹, Ritsuko Higashiyama¹, Mitsutoshi Ueda¹, Kosuke Murakami¹, Shigeyoshi Usami¹, Mihoko Maruyama¹, Masashi Yoshimura^1,2, Yusuke Mori¹ (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.ILE, The Univ. of Osaka)

Keywords:

semiconductor,GaN Crystal,Na-Flux method

We investigated the growth of thick GaN crystals by combining the Na-flux method, which enables the fabrication of high-quality GaN substrates, with oxide vapor phase epitaxy (OVPE), which provides a high growth rate. However, Ga-Na melt can be incorporated into Na-flux-grown GaN as inclusions and may cause rupture during subsequent OVPE growth. In this study, the relationship between Ga2O3-induced facet growth and inclusion formation was examined. No inclusions were observed inside the Ga2O3-added Na-flux-grown GaN substrate. In addition, no inclusion-induced rupture was observed on either the front or back surface after OVPE growth. These results suggest that Ga2O3 addition is effective in suppressing inclusion formation and that Ga2O3-added Na-flux-grown GaN can be used as a seed substrate for high-rate OVPE growth.