[9p-PA1-1~52] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-11] In-situ Diagnosis of Early-stage Growth Dynamics during Mist-CVD Growth of Amorphous TiO_x on Au and Cu Substrates Uisng Quartz Crystal Microbalance

〇Hajime Shirai¹, Fumiya Kobayashi², Hideki Kurihara³, Yoshiaki Yamamoto⁴, Haiyan He⁴, Tomomasa Sato², Nobuyuki Matsuki², Toshinori Oono⁴ (1.Saitama Univ., 2.Kanagawa Univ., 3.SAITEC, 4.Amaya Co., Ltd.)

Keywords:

Chemical vapor deposition,In-situ monitoring,Amorphous TiOx

Mist chemical vapor deposition (mist-CVD) has attracted attention as an oxide thin-film formation technique under atmospheric pressure. However, during the initial stage of film growth, multiple processes—including droplet adsorption, solvent evaporation, precursor concentration, and Ti–O network formation—proceed simultaneously, making the growth mechanism not yet fully understood. In this study, we focus on the influence of substrate sensor materials (Au and Cu) on the early-stage growth process. By utilizing frequency–resistance (FR) plots obtained from simultaneous frequency and dissipation measurements, we investigate the relationship between nonequilibrium viscoelastic transitions and interfacial states.