[9p-PA1-1~52] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-15] Influence of Sn and Al Doping on the Crystal Structure and Electrical Properties
of ZnO Thin Films

〇Yutaka Adachi¹ (1.NIMS)

Keywords:

homologous compound,polarity inversion boundaries,superlattice

The addition of Sn to ZnO has been widely studied for applications such as varistors, and it has been reported that Sn doping results in the formation of “head-to-head inversion boundaries, across which the polarity reverses its direction. On the other hand, it has been found that heavy Al doping forms “tail-to-tail” inversion boundaries in ZnO grains. In this study, we attempted to create new homologous compounds including both “head-to-head” and “tail-to-tail” inversion boundaries like In₂O₃(ZnO)_m, by pulsed laser deposition using SnO₂ and Al doped ZnO targets.