[9p-PA1-1~52] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-16] Characteristics of IGZO thin films fabricated by mist CVD using precursor materials with various concentrations

〇Chiaki Watanabe¹, Ryosuke Ohashi², Sohaib Hassan², Htet Su², Toshiyuki Kawaharamura^1,2,3 (1.School of Sys. Eng, 2.Graduate univ. of Eng, 3.Res. Inst)

Keywords:

IGZO,Mist CVD

This study investigates the effects of precursor concentration ratios and growth temperatures (200–450°C) on the characteristics of IGZO thin films fabricated using the mist CVD method. At a precursor ratio of In:Ga:Zn = 4:3:2, amorphous growth was dominant between 200°C and 400°C, maintaining a high In content of around 50%. However, at 450°C, crystallization occurred, and the In composition decreased significantly. The results indicate that the growth mechanism of the thin films changes depending on the deposition temperature.