[9p-PA1-1~52] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-26] Structural and Chemical State Characterization of NiO Thin Films Prepared by Mist-CVD

〇(M2)ENNONG NIE¹, SONGYUE YING¹, TOKIYOSHI MATSUDA¹ (1.Kindai University)

Keywords:

NiO,Mist-CVD

NiO thin films were fabricated by the Mist CVD method at deposition temperatures ranging from 100 to 500 ℃. The effects of deposition temperature on the surface chemical states, crystallinity, and optical properties of the films were investigated using XPS, XRD, and UV-Vis spectroscopy. Films deposited at lower temperatures exhibited higher concentrations of Ni3+ species and defect-related oxygen components, whereas higher deposition temperatures promoted crystallization and increased the Ni2+ content. These results indicate that the defect states and optical properties of NiO thin films can be controlled by adjusting the deposition temperature.