Presentation Information
[9p-PA1-27]First-principles study on interfaces between two phases of Ga2O3
〇Jun Nara1, Hiroyoshi Momida1,2, Takahiro Yamasaki1,2 (1.NIMS-MANA, 2.Univ. Osaka)
Keywords:
Ga2O3,Wide gap semiconductor,interface between two phases
Ga2O3 has been intensively studied as next-generation wide-gap semiconductor materials. It is well known that Ga2O3 has several phases. It is also known that mixed phase appears during crystal growth, and phase transition occurs due to annealing/pressure. In such mixed phase and phase transition, there must be interfaces between different phases. In this paper, we investigate the atomic geometry and electronic states of the interfaces of two phases by using first-principles computational method based on density functional theory. The migration of interfaces is also studied.