Presentation Information
[9p-PA1-30]Correlation between Film Density and Flexibility of In-B-O Transparent Conductive Films Deposited via H2, O2, and H2O-Introduced Sputtering
〇Shu Ishigami1, Yuya Yasaki1, Yuma Matsufuji1, Shinya Aikawa1 (1.KOGAKUIN Univ.)
Keywords:
transparent conductive oxide film,Indium Oxide,semiconductor
Flexible devices require conductive oxide thin films that are flexible, transparent, and low-resistance. However, indium tin oxide readily crystallizes and tends to form cracks under bending. In our laboratory, we have demonstrated that doping In2O3 with boron, which has a small ionic radius, yields films with transparency and conductivity comparable to those of ITO, while significantly improving flexibility. In this study, to achieve further reduction in resistivity, hydrogen and oxygen were simultaneously introduced, with the aim of increasing carrier concentration and enhancing mobility through the suppression of oxygen vacancies. The effects of the introduced gas species on various properties, as well as film density and flexibility, were systematically evaluated.