Presentation Information
[9p-PA1-37]Effects of Annealing Temperature on Transfer Characteristics of Polycrystalline In2O3 TFTs Fabricated by a Vacuum-Ultraviolet Excimer-Light-Assisted Solution Process
〇(M2)Kazuki Ueda1, Ryunosuke Ohtani1, Akira Fujimoto1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Akihiro Shimizu2, Toshihiko Maemoto1 (1.Osaka Inst. of Tech., 2.Ushio Inc.)
Keywords:
Oxide semiconductor,Thin-film transistor,Indium oxide
In2O3 thin-film transistors (TFTs) were fabricated using a vacuum-ultraviolet (VUV) excimer-light-assisted solution process, and the effects of annealing temperature on the crystallinity and transfer characteristics were investigated. Crystallinity improved with increasing annealing temperature, and an On/Off ratio of 2.0 × 107 and a field-effect mobility of 67 cm2/Vs were achieved after annealing at 450°C. These results demonstrate the effectiveness of the proposed process for the fabrication of high-mobility oxide TFTs. Further improvements in carrier concentration control and device performance will be pursued through Ga incorporation.