[9p-PA1-1~52] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-38] Fabrication and Crystallinity Control of InAl_xO_y Oxide Thin Films by an Excimer Lamp Assisted Solution Process

〇(M1)Ryunosuke Ohtani¹, Kazuki Ueda¹, Hideo Wada¹, Masatoshi Koyama¹, Akihiko Fujii¹, Akihiro Shimizu², Toshihiko Maemoto¹ (1.Osaka Inst. of Tech., 2.Ushio Inc.)

Keywords:

Oxide semiconductor,Thin film transistor,Solution process

In this study, InAl_xO_y(IAO) thin films were fabricated using an excimer lamp-assisted solution process, and their crystallinity was investigated. GI-XRD analysis revealed that increasing the Al content and applying excimer light irradiation reduced the diffraction peak intensity of In₂O₃, indicating suppression of crystal growth. These results demonstrate that the combination of Al incorporation and the excimer lamp-assisted process is effective for controlling the crystallinity of IAO thin films. XPS analysis and TFT characteristics will also be presented.