[9p-PA1-1~52] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-PA1-39] 2.59-GHz oscillator with β-Ga₂O₃ MESFET fabricated using mist CVD

Hikaru Ikeda¹, Takeru Wakamatsu¹, Yuji Ando², Hidemasa Takahashi², Ryutaro Makisako², Tetsuzo Ueda³, Jun Suda², Katsuhisa Tanaka¹, 〇Shizuo Fujita¹, Hidetaka Sugaya³ (1.Kyoto Univ., 2.Nagoya Univ., 3.Panasonic)

Keywords:

gallium oxide,mist CVD,RF device

We fabricated a MESFET using mist CVD-grown n-type β-Ga₂O₃ and obtained oscillation at 2.59 GHz. Detailed characteristics will be presented at the meeting.