Presentation Information
[9p-PA1-40]Fabrication and Characterization of Multilayer Oxide Thin-Film Transistors with Ultrathin In2O3 Channels
〇(M2)Naoki Takada1, Akira Fujimoto1, Hideo Wada1, Masatoshi Koyama1, Akihiko Fujii1, Toshihiko Maemoto1 (1.Osaka Institute of Tech.)
Keywords:
In2O3,Thin-film transistor,Oxide Hetero
To achieve both high mobility and operational stability in oxide semiconductor thin-film transistors (TFTs), In2O3/ZnO stacked TFTs were fabricated by controlling the surface of an ultrathin In2O3 channel with a ZnO overlayer. The ZnO stacking increased the field-effect mobility by approximately twofold while simultaneously improving the subthreshold characteristics and reducing hysteresis. These results indicate that the stacked structure effectively suppresses the influence of surface trap states and adsorbed species on the channel surface. This study provides an effective design strategy for realizing high-performance and highly reliable oxide TFTs.